| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 16+17+ | On Request | On Request |
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The Infineon BFR193E6327HTSA1 is a low-noise NPN silicon bipolar RF transistor designed for high-frequency amplifier applications up to 2 GHz. It is housed in a compact SOT23-3 (TO-236-3, SC-59) surface-mount package with a PG-SOT23 supplier device package designation.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 12 V, a collector-base voltage (VCBO) of 20 V, and an emitter-base voltage (VEBO) of 2 V. The device supports a maximum collector current of 80 mA and dissipates up to 580 mW at a soldering point temperature of 69°C. The transition frequency (fT) is 6 GHz minimum and 8 GHz typical, measured at Ic=50 mA and Vce=8 V.
The transistor offers a typical noise figure of 1 dB at 900 MHz and 1.6 dB at 1.8 GHz, making it suitable for low-noise amplifier stages. It provides a maximum available gain of 15 dB at 900 MHz and 10 dB at 1.8 GHz, with a transducer gain of 13 dB and 7.5 dB at the respective frequencies. The 1 dB compression point is 13 dBm and the third-order intercept point (IP3) is 30 dBm at 900 MHz.
The device is RoHS3 compliant and available in a Pb-free package. It operates over a junction temperature range up to 150°C and can be stored between -55°C and 150°C. The junction-to-soldering point thermal resistance is 140 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.31 | $0.31 |
| 10+ | $0.22 | $0.22 |
| 25+ | $0.19 | $0.19 |
| 100+ | $0.16 | $0.16 |
| 250+ | $0.15 | $0.15 |
| 500+ | $0.14 | $0.14 |
| 1,000+ | $0.14 | $0.14 |
| 3,000+ | $0.13 | $0.13 |
| 6,000+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency is 6 GHz minimum and 8 GHz typical, measured at Ic=50 mA, Vce=8 V, f=500 MHz.
The typical noise figure is 1 dB at 900 MHz and 1.6 dB at 1.8 GHz, measured at Ic=10 mA, Vce=8 V.
The collector-emitter breakdown voltage (VCEO) is 12 V minimum, measured at Ic=1 mA, Ib=0.
The device is available in a TO-236-3, SC-59, SOT-23-3 surface-mount package with a PG-SOT23 supplier device package.
The junction temperature can reach up to 150°C, and the storage temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant and the package is Pb-free (RoHS compliant) as stated in the datasheet.