Mfr Part #:

BFR181WE6327

BFR181WE6327 is a low noise NPN silicon bipolar RF transistor from Infineon. It features 8 GHz transition frequency, 0.9 dB noise figure at 900 MHz, and 175 mW power dissipation in SOT-323 surface mount package.

✓ Total Stock: 2,929 pcs

$ Price Range: $0.12 - $0.12

BFR181WE6327 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,929 pcs On Request	2929 pcs	On Request	1	On Request	On Request	0641+	On Request	On Request

BFR181WE6327 Description

Short technical summary and product information.

The BFR181WE6327 is a low noise NPN silicon bipolar RF transistor designed for low noise, high-gain broadband amplifiers. This transistor features a transition frequency of 8 GHz (typical) and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz and 1.2 dB at 1.8 GHz. It delivers a maximum stable gain of 19 dB at 900 MHz and a maximum available gain of 13.5 dB at 1.8 GHz. The DC current gain (hFE) ranges from 70 to 140 with a typical value of 100 at Ic=5 mA, Vce=8 V. The device is capable of a collector current of 20 mA and a collector-emitter voltage of 12 V, with a total power dissipation of 175 mW (at Ts ≤ 90 °C). The transistor is housed in a SOT-323 (SC-70) surface mount package, which is Pb-free and RoHS compliant. It is also halogen free. The junction temperature rating is 150 °C. This transistor is suitable for use in RF amplifiers, oscillators, and other high-frequency applications.

BFR181WE6327 Quick Information

Product Type: RF Bipolar Transistor

Series: BFR181W

Canonical Name: Infineon BFR181W Low Noise NPN Bipolar RF Transistor

Subcategory: RF Transistor

BFR181WE6327 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BFR181WE6327 Estimated Pricing

Qty	Low	High
9,000+	$0.12	$0.12
15,000+	$0.12	$0.12
21,000+	$0.12	$0.12
30,000+	$0.12	$0.12
75,000+	$0.12	$0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFR181WE6327 Features

Low noise figure of 0.9 dB.
High transition frequency of 8 GHz.
Surface mount SOT-323 package.
RoHS compliant and halogen free.
Maximum power dissipation of 175 mW.

BFR181WE6327 Applications

Low noise RF amplifier circuits.
Broadband high-gain applications.
Oscillator and mixer designs.
Wireless communication systems.

BFR181WE6327 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating voltage range?

Collector-emitter voltage (Vceo) max 12 V, collector-base voltage (Vcbo) max 20 V, emitter-base voltage (Vebo) max 2 V.

What is the package type?

SC-70, SOT-323 with supplier device package SOT-323.

What is the operating temperature range?

Ambient temperature: -65 to 150 °C; junction temperature: 150 °C maximum.

Is the BFR181WE6327 RoHS compliant?

Yes, it is RoHS compliant (Pb-free).

What is the transition frequency?

Typical 8 GHz, minimum 6 GHz at Ic=10 mA, Vce=8 V, f=500 MHz.

What is the noise figure?

0.9 dB at 900 MHz and 1.2 dB at 1.8 GHz (Ic=2 mA, Vce=8 V).

What is the DC current gain?

hFE: 70 minimum, 100 typical, 140 maximum at Ic=5 mA, Vce=8 V.

Category	Transistors - Bipolar (BJT) - RF
Manufacturer Name	Infineon Technologies
AEC Qualified	Yes
Automotive Grade	Yes
Current	20 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 / 100 / 140
Frequency	6 / 8 GHz
Gain	19 dB
Halogen Free	Halogen Free
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	0.9 dB
Operating Temperature	150 °C
Power	175 mW
Storage Temperature	-65°C ~ 150°C
Supplier Device Package	SOT-323
Transistor Type	NPN
Voltage	12 V