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BFR181E6327 The Infineon BFR181E6327 is an NPN RF bipolar transistor in a surface-mount SOT-23 package. It features a transition frequency of 8GHz and a maximum collector current of 20mA.
Mfr Part #:

BFR181E6327

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon BFR181E6327 is an NPN RF bipolar transistor in a surface-mount SOT-23 package. It features a transition frequency of 8GHz and a maximum collector current of 20mA.
✓ Total Stock: 21,255 pcs
$ Price Range: $0.27

BFR181E6327 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
21,000 pcs
On Request
21000 pcs On Request 1 On Request On Request 1350+ On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
255 pcs
On Request
255 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BFR181E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
DC Current Gain (hFE) (Min) @ Ic, Vce
Gain
Lead Style
Mounting Type
Operating Temperature
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
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BFR181E6327 Description

Short technical summary and product information.

The Infineon BFR181E6327 is an NPN RF bipolar transistor designed for high-frequency applications. It is housed in a compact TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting.

 

Key electrical characteristics include a transition frequency of 8GHz, a maximum collector current (Ic) of 20mA, and a collector-emitter breakdown voltage (Vceo) of 12V. The transistor offers a minimum DC current gain (hFE) of 70 at 5mA and 8V, with a maximum power dissipation of 175mW. The noise figure is typically between 0.9dB and 1.2dB at frequencies from 900MHz to 1.8GHz.

 

This device operates at a junction temperature up to 150°C. Its SOT-23 package and RF capabilities make it suitable for various radio frequency circuits and amplification applications where space and performance are critical.

BFR181E6327 Quick Information

Product Type: Bipolar Transistor (BJT)
Series: BFR181
Canonical Name: Infineon BFR181E6327 NPN RF Bipolar Transistor
Subcategory: RF Bipolar Transistor

BFR181E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFR181E6327 Estimated Pricing

Qty Low High
1+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFR181E6327 Features

  • NPN RF bipolar transistor.
  • 8GHz transition frequency.
  • 20mA maximum collector current.
  • 12V collector-emitter breakdown voltage.
  • Surface mount SOT-23 package.

BFR181E6327 Applications

  • Used in low-noise RF amplifier stages.
  • Suitable for oscillator circuits up to 8GHz.
  • Ideal for wireless communication front-ends.
  • Employed in RF signal conditioning modules.

BFR181E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transition frequency of the BFR181E6327?

The transition frequency (fT) is 8GHz.

What is the gain of this transistor?

The typical gain is 18.5dB.

What is the maximum collector current?

The maximum collector current (Ic) is 20mA.

What is the collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (Vce) is 12V.

What package does the BFR181E6327 come in?

It is available in a TO-236-3, SC-59, SOT-23-3 surface-mount package (PG-SOT23).

What is the operating temperature range?

The maximum junction temperature is 150°C.

What is the noise figure of this transistor?

The typical noise figure is 0.9dB to 1.2dB across 900MHz to 1.8GHz.

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