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BFR 360F E6327 Infineon BFR360F is an NPN silicon RF transistor in a SOT-723 package. It features a 14 GHz transition frequency, 1 dB noise figure at 1.8 GHz, and is AEC Q101 qualified.
Mfr Part #:

BFR 360F E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BFR360F is an NPN silicon RF transistor in a SOT-723 package. It features a 14 GHz transition frequency, 1 dB noise figure at 1.8 GHz, and is AEC Q101 qualified.
✓ Total Stock: 2,850 pcs

BFR 360F E6327 Available from 1 distributor

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✓ Non-Authorised
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Husky International Electronic ✓
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2,850 pcs
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2850 pcs On Request 1 On Request On Request N/A On Request On Request
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BFR 360F E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
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BFR 360F E6327 Description

Short technical summary and product information.

The Infineon BFR360F is an NPN silicon RF transistor designed for low-noise amplifier and oscillator applications up to 3.5 GHz. It is housed in a Pb-free SOT-723 (PG-TSFP-3) surface-mount package and qualified to AEC Q101 automotive standards.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 6 V minimum (9 V typical), a maximum collector current of 35 mA, and a total power dissipation of 210 mW. The transistor offers a typical transition frequency (fT) of 14 GHz at 15 mA and 3 V, a minimum noise figure (NFmin) of 1 dB at 1.8 GHz, and a typical maximum available power gain (Gma) of 15.5 dB at 1.8 GHz.

 

The device is suitable for low-current RF applications requiring low noise and moderate gain. Its collector design supports a 5 V supply voltage, making it appropriate for battery-powered and portable equipment. The operating junction temperature range is up to 150 °C, with a storage range of -55 to 150 °C.

BFR 360F E6327 Quick Information

Product Type: RF Bipolar Transistor
Series: BFR360F
Canonical Name: Infineon BFR360F NPN Silicon RF Transistor
Subcategory: Low Noise Amplifier Transistor

BFR 360F E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BFR 360F E6327 Features

  • 14 GHz transition frequency at 15 mA.
  • 1 dB noise figure at 1.8 GHz.
  • 15.5 dB gain at 1.8 GHz.
  • AEC Q101 automotive qualified.
  • Pb-free RoHS compliant SOT-723 package.

BFR 360F E6327 Applications

  • Low-noise amplifiers for RF front ends.
  • Oscillators up to 3.5 GHz.
  • Battery-powered portable RF devices.
  • Automotive RF modules and systems.

BFR 360F E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BFR360F?

The maximum collector-emitter voltage (VCEO) is 6 V.

What is the transition frequency (fT) of the BFR360F?

The typical transition frequency is 14 GHz at IC=15 mA and VCE=3 V.

What is the noise figure of the BFR360F at 1.8 GHz?

The typical minimum noise figure (NFmin) is 1 dB at IC=3 mA, VCE=3 V, and f=1.8 GHz.

What package does the BFR360F come in?

The BFR360F is available in a SOT-723 surface-mount package (PG-TSFP-3).

Is the BFR360F RoHS compliant?

Yes, the BFR360F is Pb-free and RoHS compliant.

What is the maximum operating junction temperature?

The maximum junction temperature (TJ) is 150 °C.

Is the BFR360F qualified for automotive applications?

Yes, the BFR360F is AEC Q101 qualified.

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