| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
298,000 pcs
|
298000 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Voltage |
The Infineon BFR182T is an NPN silicon RF bipolar junction transistor designed for low noise, high-gain broadband amplifier applications. It features a maximum collector-emitter voltage of 12V, a collector current of 35mA, and a total power dissipation of 250mW.
With a transition frequency of typically 8GHz and a maximum noise figure of 1.2dB at 900MHz, this transistor is suitable for RF front-end and IF amplifier stages. DC current gain (hFE) ranges from 50 to 200 at 10mA, 8V.
The BFR182T is housed in a surface mount SC-75 (SOT-416) package with pin configuration 1=Base, 2=Emitter, 3=Collector. It is designed for ambient temperatures up to 150°C and storage from -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.12 | $0.12 |
| 9,000+ | $0.12 | $0.12 |
| 15,000+ | $0.11 | $0.11 |
| 21,000+ | $0.11 | $0.11 |
| 30,000+ | $0.11 | $0.11 |
| 75,000+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 12V.
The transition frequency (fT) is typically 8GHz (minimum 6GHz) at IC=15mA, VCE=8V.
The BFR182T is available in an SC-75 (SOT-416) surface mount package.
The maximum noise figure is 1.2dB at 900MHz (IC=3mA, VCE=8V).