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BFQ67W The Philips BFQ67W is an NPN transistor designed for wideband applications up to 2 GHz. It offers high power gain and low noise figure.
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BFQ67W

Available from 1 distributors
Mfr Name: Philips
Philips
The Philips BFQ67W is an NPN transistor designed for wideband applications up to 2 GHz. It offers high power gain and low noise figure.
✓ Total Stock: 20,985 pcs
$ Price Range: $0.27

BFQ67W Available from 1 distributor

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✓ Non-Authorised
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Bristol Electronics ✓
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20,985 pcs
On Request
20985 pcs On Request 1 On Request On Request On Request On Request On Request
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BFQ67W Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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BFQ67W Description

Short technical summary and product information.

The BFQ67W is an NPN bipolar transistor from Philips Semiconductors, designed for high-frequency applications such as satellite TV tuners and RF portable communications equipment. It operates effectively up to 2 GHz.

 

Key electrical characteristics include a high transition frequency (fT) of 8 GHz at 15 mA collector current and 8 V collector-emitter voltage. The transistor provides a maximum unilateral power gain (GUM) of 13 dB at 1 GHz and a low noise figure (F) of 1.3 dB at 1 GHz. It is housed in a compact SOT-323 plastic envelope, suitable for surface mount assembly.

 

With gold metallization ensuring excellent reliability, the BFQ67W is a robust choice for demanding RF designs. Its specifications make it suitable for applications requiring amplification and low noise at radio frequencies.

BFQ67W Quick Information

Product Type: RF Bipolar Transistor
Canonical Name: BFQ67W NPN 8 GHz wideband transistor
Subcategory: RF

BFQ67W Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFQ67W Estimated Pricing

Qty Low High
1+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFQ67W Features

  • NPN 8 GHz wideband transistor
  • High power gain of 13 dB
  • Low noise figure of 1.3 dB
  • High transition frequency of 8 GHz
  • SOT-323 surface mount package

BFQ67W Applications

  • Suitable for satellite TV tuners
  • Ideal for RF portable communications
  • Wideband amplifier applications
  • Low noise RF circuit designs

BFQ67W FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transition frequency of the BFQ67W transistor?

The transition frequency (fT) of the BFQ67W is 8 GHz when measured at 15 mA collector current, 8 V collector-emitter voltage, and 2 GHz frequency at 25°C ambient temperature.

What is the maximum power gain for the BFQ67W transistor?

The maximum unilateral power gain (GUM) for the BFQ67W is 13 dB at 1 GHz, 15 mA collector current, and 8 V collector-emitter voltage at 25°C ambient temperature.

What is the noise figure of the BFQ67W transistor?

The noise figure (F) of the BFQ67W is 1.3 dB at 5 mA collector current, 8 V collector-emitter voltage, and 1 GHz frequency.

What package type is the BFQ67W transistor supplied in?

The BFQ67W transistor is supplied in a SOT-323 envelope.

What are the operating voltage limits for the BFQ67W transistor?

The collector-base voltage (VCBO) limit is 20 V, and the collector-emitter voltage (VCEO) limit is 10 V.

What is the maximum collector current for the BFQ67W transistor?

The maximum DC collector current (IC) for the BFQ67W is 50 mA.

What is the RoHS status of the BFQ67W transistor?

The RoHS status is RoHS3 Compliant.

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