| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
410 pcs
|
410 pcs | On Request | 1 | On Request | On Request | 1412+ | On Request | On Request | |
|
268 pcs
|
268 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The BFQ540 is an NPN wideband transistor designed for applications requiring high performance in a compact form factor. It is packaged in a SOT89 plastic surface-mount package, featuring a collector pad for enhanced heat transfer.
Key electrical characteristics include a collector-base voltage of 20V and a collector-emitter voltage of 15V. The device offers a typical DC current gain (hFE) of 120 at 40mA collector current and 8V collector-emitter voltage. Its transition frequency (fT) is 9 GHz at 1 GHz, with an insertion power gain (|s21|2) of 13 dB at 900 MHz. The noise figure (F) is a low 2.4 dB at 900 MHz.
With gold metallization ensuring excellent reliability and a low thermal resistance, the BFQ540 is suitable for VHF, UHF, and CATV amplifiers. The operating junction temperature can reach up to 175 °C, with a total power dissipation of 1.2W at a soldering point temperature of 60 °C.
This transistor is designed for applications demanding high gain and low noise performance in RF circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BFQ540 is supplied in a SOT89 plastic surface-mounted package.
The BFQ540 has a collector-base voltage (VCBO) of 20V, a collector-emitter voltage (VCES) of 15V, and a collector current (IC) of 120mA.
The transition frequency (fT) of the BFQ540 is 9 GHz at 40mA collector current, 8V collector-emitter voltage, and 1 GHz frequency.
The typical noise figure (F) for the BFQ540 at 900 MHz is 2.4 dB.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.