BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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| SVHC Present |
The BFQ19S is an NPN silicon RF transistor designed for high-frequency amplification applications. Manufactured by Infineon, this transistor offers a collector-emitter breakdown voltage of 15V minimum and a DC current gain range of 70 to 140. With a transition frequency of 4 to 5.5 GHz, it is suitable for RF circuits up to the GHz range. The transistor features low leakage currents: collector-emitter cutoff current of 10µA maximum, collector-base cutoff current of 100nA maximum, and emitter-base cutoff current of 100nA maximum. Its collector-base capacitance is typically 1.05pF and collector-emitter capacitance is 0.4pF, making it suitable for high-frequency designs. The BFQ19S is commonly used in RF amplifier stages, oscillators, and other wireless communication circuits.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (V(BR)CEO) is 15V.
The transition frequency (fT) is 4 to 5.5 GHz.
The DC current gain (hFE) ranges from 70 to 140.
Collector-emitter cutoff current (ICES) is 10µA max, collector-base cutoff current (ICBO) is 100nA max, and emitter-base cutoff current (IEBO) is 100nA max.
The collector-base capacitance (Ccb) is typically 1.05pF and maximum 1.35pF.
The collector-emitter capacitance (Cce) is typically 0.4pF.