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85 pcs
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85 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFQ135 is an NPN wideband transistor manufactured by NXP Semiconductors, suitable for MATV and microwave amplifiers. It operates with a collector-emitter voltage (VCEO) of up to 19V and a collector current (IC) of 150mA.
This transistor boasts a transition frequency (fT) of 6.5 GHz at 120mA collector current and 18V VCE. It also offers a maximum unilateral power gain (GUM) of 17 dB at 500 MHz and 13.5 dB at 800 MHz under similar test conditions. The device is constructed with emitter-ballasting resistors and gold sandwich metallization for optimal temperature profile and reliability.
The BFQ135 is supplied in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base, making it suitable for surface mounting applications. Its design is optimized for applications such as aerial amplifiers, radar systems, oscilloscopes, and spectrum analyzers.
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) of the BFQ135 transistor is 6.5 GHz.
The maximum collector-emitter voltage (VCEO) for the BFQ135 is 19V.
The maximum collector current (IC) for the BFQ135 is 150mA.
The BFQ135 transistor is supplied in a 4-lead dual-emitter SOT172A2 package.
The BFQ135 transistor is primarily intended for use in MATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, and spectrum analyzers.