Mfr Part #:

BFP840FESD

Mfr Name: Infineon

The Infineon BFP840FESD is a SiGe:C NPN RF bipolar transistor with integrated ESD protection, suitable for 5 GHz band applications.

✓ Total Stock: 964 pcs

$ Price Range: $0.24

BFP840FESD Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	964 pcs On Request	964 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BFP840FESD Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gain	23 dB
Noise Figure	0.75 dB
Voltage	1.2 V, 1.8 V, 2.85 V, 3.3 V, 3.6 V

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BFP840FESD Description

Short technical summary and product information.

The Infineon BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection, designed for 5 GHz band applications. It offers a unique combination of high RF performance and robustness, including a maximum RF input power of 20 dBm and 1.5 kV HBM ESD hardness.

Key electrical characteristics include a high transition frequency (fT) of 85 GHz, enabling excellent noise performance with a minimum noise figure (NFmin) of 0.75 dB at 5.5 GHz, 1.8 V, and 5 mA. The transistor provides high gain (Gms) of 23 dB at 5.5 GHz, 1.8 V, and 10 mA, and an output third-order intercept point (OIP3) of 22 dBm under the same conditions.

This device is suitable for low voltage applications, operating at VCC levels of 1.2 V and 1.8 V. Higher voltages (2.85 V, 3.3 V, 3.6 V) are supported with the addition of a corresponding collector resistor. The BFP840FESD is qualified for industrial applications according to JEDEC standards.

Potential applications include WLAN, WiMAX, and UWB systems, as well as satellite communication systems such as satellite radio (SDARs, DAB) and navigation systems (GPS, GLONASS, BeiDou, Galileo). The transistor is supplied in a TSFP-4-1 package and is sensitive to electrostatic discharge, requiring appropriate handling precautions.

BFP840FESD Quick Information

Product Type: RF Bipolar Transistor

Series: BFP840

Canonical Name: BFP840FESD SiGe:C NPN RF Bipolar Transistor with Integrated ESD Protection

Subcategory: RF

BFP840FESD Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BFP840FESD Estimated Pricing

Qty	Low	High
1+	$0.24	$0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFP840FESD Features

Integrated ESD protection with 1.5 kV HBM hardness.
High transition frequency of 85 GHz.
Low noise figure of 0.75 dB at 5.5 GHz.
High gain of 23 dB at 5.5 GHz.
Suitable for low voltage applications.

BFP840FESD Applications

Ideal for WLAN and WiMAX systems.
Used in UWB applications.
Suitable for satellite radio systems.
Applicable for navigation systems like GPS.

BFP840FESD FAQs

7 frequently asked questions generated from this part’s specifications.

What is the transition frequency (fT) of the BFP840FESD transistor?

The transition frequency (fT) of the BFP840FESD is 85 GHz.

What is the minimum noise figure (NFmin) for the BFP840FESD at 5.5 GHz?

The minimum noise figure (NFmin) is 0.75 dB at 5.5 GHz, 1.8 V, and 5 mA.

What is the typical gain (Gms) of the BFP840FESD at 5.5 GHz?

The typical gain (Gms) is 23 dB at 5.5 GHz, 1.8 V, and 10 mA.

What is the OIP3 of the BFP840FESD at 5.5 GHz?

The OIP3 is 22 dBm at 5.5 GHz, 1.8 V, and 10 mA.

What operating voltages are supported by the BFP840FESD?

The BFP840FESD is suitable for low voltage applications, including 1.2 V and 1.8 V. For 2.85 V, 3.3 V, and 3.6 V, a corresponding collector resistor is required.

What is the ESD hardness of the BFP840FESD?

The BFP840FESD has a Human Body Model (HBM) ESD hardness of 1.5 kV.

What package is the BFP840FESD supplied in?

The BFP840FESD is supplied in a TSFP-4-1 package.