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BFP780H6327XTSA1 The BFP780 is a high linearity NPN silicon germanium RF medium power transistor from Infineon. It features 27 dB gain at 900 MHz and a low noise figure of 1.2 dB.
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BFP780H6327XTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The BFP780 is a high linearity NPN silicon germanium RF medium power transistor from Infineon. It features 27 dB gain at 900 MHz and a low noise figure of 1.2 dB.
✓ Total Stock: 3,593 pcs

BFP780H6327XTSA1 Available from 1 distributor

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BFP780H6327XTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Industrial Grade
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
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BFP780H6327XTSA1 Description

Short technical summary and product information.

The Infineon BFP780 (ordering code BFP780H6327XTSA1) is a single-stage NPN silicon germanium RF medium power transistor designed for high linearity and high gain applications. It is housed in a surface-mount SOT343 (SC-82A) package with a pin configuration of 1=Base, 2=Emitter, 3=Collector, 4=Emitter.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 6.1 V, a maximum collector current of 120 mA, and a maximum power dissipation of 600 mW. The transistor delivers a typical gain of 27 dB at 900 MHz and an output third-order intercept point (OIP3) of 34.5 dBm at 900 MHz, 5 V, and 90 mA. The minimum noise figure is 1.2 dB at 900 MHz, 5 V, and 30 mA.

 

This device is qualified for industrial applications per JEDEC47/20/22 standards and is suitable for commercial and industrial wireless infrastructure, ISM band medium power amplifiers, automated test equipment, and UHF television/CATV/DBS systems. The standard package quantity is 3000 pieces per reel.

BFP780H6327XTSA1 Quick Information

Product Type: RF Bipolar Junction Transistor
Canonical Name: Infineon BFP780 NPN Silicon Germanium RF Transistor
Subcategory: NPN Silicon Germanium

BFP780H6327XTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BFP780H6327XTSA1 Features

  • High linearity NPN silicon germanium transistor.
  • 27 dB typical gain at 900 MHz.
  • Low noise figure of 1.2 dB at 900 MHz.
  • OIP3 of 34.5 dBm at 900 MHz.
  • Surface mount SOT343 package.

BFP780H6327XTSA1 Applications

  • Commercial and industrial wireless infrastructure.
  • ISM band medium power amplifiers and drivers.
  • Automated test equipment (ATE).
  • UHF television, CATV, and DBS systems.

BFP780H6327XTSA1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) of the BFP780?

The maximum collector-emitter breakdown voltage (Vceo) is 6.1 V.

What is the typical gain of the BFP780 at 900 MHz?

The typical gain is 27 dB at 900 MHz.

What is the package type for the BFP780?

The BFP780 is available in a surface-mount SC-82A / SOT-343 package, with supplier device package PG-SOT343-4-1.

What is the operating temperature range of the BFP780?

The maximum junction temperature is 150°C.

Is the BFP780 RoHS compliant?

The BFP780 is listed as RoHS3 compliant, but this information is unverified and should be confirmed with the manufacturer.

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