| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,118 pcs
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2118 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Infineon BFP740FH6327 is a high-frequency RF Bipolar Transistor utilizing SiGe technology. It operates at frequencies up to 42 GHz, with a maximum Collector-Emitter Voltage (VCEO) of 4V and a Continuous Collector Current of 30mA. The power dissipation (Pd) is rated at 160mW.
This transistor is suitable for applications requiring high-frequency performance. It operates within a temperature range of -65°C to +150°C. The component is packaged in a TSFP-4 case and is designed for Surface Mount Device (SMD) or Surface Mount Technology (SMT) mounting.
Key electrical specifications include an Emitter-Base Voltage (VEBO) of 1.2V and a Collector-Base Voltage (VCBO) of 13V. The transistor is supplied on a reel, with a factory pack quantity of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BFP740FH6327 transistor operates at frequencies up to 42 GHz.
The maximum Collector-Emitter Voltage (VCEO) for the BFP740FH6327 is 4V.
The continuous collector current rating is 30 mA.
The power dissipation (Pd) is 160 mW.
The minimum operating temperature is -65°C and the maximum is +150°C.
The BFP740FH6327 is in a TSFP-4 package.
The BFP740FH6327 transistor is designed for SMD/SMT mounting.