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BFP740FESDH6327 NPN RF bipolar transistor from Infineon Technologies with 4.2V collector-emitter voltage, 45mA collector current, and 47 GHz transition frequency. Packaged in a 4-TSFP surface mount package.
Mfr Part #:

BFP740FESDH6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
NPN RF bipolar transistor from Infineon Technologies with 4.2V collector-emitter voltage, 45mA collector current, and 47 GHz transition frequency. Packaged in a 4-TSFP surface mount package.
✓ Total Stock: 1,086 pcs

BFP740FESDH6327 Available from 1 distributor

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1,086 pcs
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BFP740FESDH6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Lead Style
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
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BFP740FESDH6327 Description

Short technical summary and product information.

The BFP740FESDH6327 is an NPN RF bipolar junction transistor manufactured by Infineon Technologies. It is designed for X-band RF applications, offering a maximum collector-emitter voltage of 4.2 V and a maximum collector current of 45 mA. The transistor features a typical transition frequency (fT) of 47 GHz, making it suitable for high-frequency signal amplification.

 

Electrical characteristics include a DC current gain (hFE) of 160 minimum at Ic=25mA, Vce=3V, and a typical gain of 39 dB. The noise figure ranges from 0.5 dB to 1.45 dB across 150 MHz to 10 GHz. Maximum power dissipation is 160 mW, with a maximum junction temperature of 150°C.

 

The device is housed in a 4-SMD flat leads package (4-TSFP supplier package) and is surface mountable. It is RoHS3 compliant, MSL level 1 (unlimited), and REACH unaffected. These specifications make it appropriate for use in RF amplifiers, oscillators, and other high-frequency circuits.

BFP740FESDH6327 Quick Information

Product Type: RF Bipolar (BJT) Transistor
Canonical Name: BFP740FESDH6327 NPN RF Transistor
Subcategory: RF Transistor

BFP740FESDH6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFP740FESDH6327 Features

  • NPN RF transistor for X-band applications.
  • Maximum collector-emitter voltage 4.2 V.
  • Transition frequency up to 47 GHz.
  • Surface mount 4-TSFP package.

BFP740FESDH6327 Applications

  • Used in RF low-noise amplifiers.
  • Suitable for oscillator circuits up to 10 GHz.
  • Ideal for X-band wireless systems.

BFP740FESDH6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BFP740FESDH6327?

4.2 V.

What is the transition frequency of this transistor?

47 GHz.

What is the typical noise figure?

0.5 dB to 1.45 dB across 150 MHz to 10 GHz.

What package does the BFP740FESDH6327 come in?

4-SMD, Flat Leads (4-TSFP supplier package).

What is the maximum operating junction temperature?

150 °C.

Is the BFP740FESDH6327 RoHS compliant?

RoHS3 compliant (unverified).

What is the DC current gain (hFE) at Ic=25mA, Vce=3V?

160 minimum.

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