| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,919 pcs
|
2919 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Noise Figure | |
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| Transistor Type |
The Infineon BFP740 is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) designed for wideband applications. It offers a low noise figure of 0.85 dB at 5.5 GHz (3V, 6mA) and high gain of 19.5 dB at 5.5 GHz (3V, 15mA). The device also provides an output third-order intercept point (OIP3) of 24.5 dBm under the same conditions.
This transistor is qualified for industrial applications according to JEDEC standards. Its performance characteristics make it suitable for a range of wireless communication systems, including WLAN, WiMax, and UWB. It is also applicable in satellite communication systems like GNSS navigation, satellite radio, and C-band LNBs, as well as multimedia applications such as portable TV, CATV, and FM radio.
Additional applications include ISM applications like RKE, AMR, and Zigbee, and other emerging wireless technologies. The BFP740 comes in a SOT343 package and is supplied on reels of 3000 pieces. It is sensitive to electrostatic discharge and requires appropriate handling precautions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The noise figure (NFmin) is 0.85 dB at 5.5 GHz, 3 V, and 6 mA.
The gain (Gms) is 19.5 dB at 5.5 GHz, 3 V, and 15 mA.
The output third-order intercept point (OIP3) is 24.5 dBm at 5.5 GHz, 3 V, and 15 mA.
The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT).
The BFP740 is supplied in a SOT343 package.
There are 3000 pieces per reel.