| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 1722+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The Infineon BFP720H6327 is an NPN RF bipolar junction transistor designed for high-frequency applications. It features a transition frequency (fT) of 45GHz, making it suitable for X-band and other RF circuits. The transistor offers a DC current gain (hFE) of 160 minimum at 13mA collector current and 3V collector-emitter voltage. Its noise figure ranges from 0.4dB to 0.95dB across 150MHz to 10GHz, and gain spans 10.5dB to 28.5dB.
The device is rated for a maximum collector-emitter voltage of 4.7V and a continuous collector current of 25mA, with a maximum power dissipation of 100mW. It operates over a junction temperature range up to 150°C.
The BFP720H6327 is housed in a surface-mount SC-82A (SOT-343) package with supplier device package PG-SOT343-4-2. It is suitable for automated assembly and compact RF designs.
The maximum collector-emitter voltage is 4.7V.
It is available in SC-82A (SOT-343) surface-mount package with supplier device package PG-SOT343-4-2.
The maximum junction operating temperature is 150°C.
It is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The minimum DC current gain is 160 at Ic=13mA and Vce=3V.
The typical noise figure ranges from 0.4dB to 0.95dB over a frequency range of 150MHz to 10GHz.
The transition frequency is 45GHz.