| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,523 pcs
|
7523 pcs | On Request | 1 | On Request | On Request | 2014 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Industrial Grade | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The BFP650 is a high linearity wideband silicon NPN RF bipolar transistor from Infineon Technologies, part of their established sixth generation SiGe:C transistor family. It offers a transition frequency (fT) of 42 GHz and excellent linearity at low currents, making it suitable for energy-efficient designs up to 5 GHz.
Key electrical specifications include a collector-emitter breakdown voltage of 4.5 V, maximum collector current of 150 mA, and power dissipation of 500 mW. The device achieves a minimum noise figure of 1 dB at 2.4 GHz, 3 V, and 30 mA, and a typical gain (Gma) of 17.5 dB at 2.4 GHz, 3 V, and 70 mA. The typical output third-order intercept point (OIP3) is 30 dBm at the same bias conditions.
The BFP650 is housed in a surface mount SOT343 (SC-82A) package with a supplier device package of PG-SOT343-3D. It is qualified for industrial applications per JEDEC and AEC-Q101 standards. Typical applications include low noise, high linearity amplifiers for SDARS receivers, ISM band applications, and CATV multimedia systems.
4.5 V.
SC-82A (SOT-343) surface mount package.
RoHS3 compliant (unverified).
42 GHz (from datasheet).
150 mA.
17.5 dB.
30 dBm.