| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Gain | |
| Halogen Free | |
| Industrial Grade | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Noise Figure | |
| SVHC Present | |
| Tape & Reel |
The Infineon BFP640 is a surface-mount, high-linearity silicon NPN RF bipolar transistor based on SiGe:C technology. It is part of Infineon's sixth-generation transistor family, featuring a transition frequency (fT) of 42 GHz. This high linearity at low currents makes it particularly suitable for energy-efficient designs operating at frequencies as high as 8 GHz.
Key electrical characteristics include a minimum noise figure (NFmin) of 0.65 dB at 1.9 GHz (3 V, 6 mA), a high gain (Gma) of 24 dB at 1.9 GHz (3 V, 25 mA), and an output third-order intercept point (OIP3) of 26.5 dBm at 1.9 GHz (3 V, 25 mA).
The BFP640 is qualified for industrial applications according to JEDEC standards. Potential applications include low-noise amplifiers (LNAs) in GNSS receivers, satellite radio receivers (SDARs, DAB), and multimedia applications such as CATV and FM radio.
This device is supplied in a SOT343 package and is sensitive to electrostatic discharge (ESD), requiring careful handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) of the BFP640 is 42 GHz.
The minimum noise figure (NFmin) is 0.65 dB at 1.9 GHz, 3 V, and 6 mA.
The high gain (Gma) is 24 dB at 1.9 GHz, 3 V, and 25 mA.
The output third-order intercept point (OIP3) is 26.5 dBm at 1.9 GHz, 3 V, and 25 mA.
The BFP640 is supplied in a SOT343 package.
There are 3000 pieces per reel.