| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Industrial Grade | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
This is an NPN RF bipolar junction transistor manufactured by Infineon Technologies. It is designed for high-frequency applications up to 45 GHz.
Key electrical specifications include a collector-emitter voltage (Vce) maximum of 3.5 V, collector current (Ic) maximum of 40 mA, and power dissipation of 100 mW. The DC current gain (hFE) is minimum 70 at Ic=20mA, Vce=2V. Typical noise figure is 0.95 dB at 1.8 GHz, and typical power gain is 22.5 dB.
The transistor is surface mount packaged in SC-82A / SOT-343 (supplier package PG-SOT343-3D). It is rated for operation up to 150°C junction temperature.
This component is suitable for RF amplifier and oscillator circuits in wireless communications, radar, and other high-frequency systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.52 | $0.52 |
| 10+ | $0.36 | $0.36 |
| 25+ | $0.33 | $0.33 |
| 100+ | $0.28 | $0.28 |
| 250+ | $0.26 | $0.26 |
| 500+ | $0.25 | $0.25 |
| 1,000+ | $0.24 | $0.24 |
| 3,000+ | $0.23 | $0.23 |
| 6,000+ | $0.22 | $0.22 |
| 9,000+ | $0.22 | $0.22 |
| 15,000+ | $0.22 | $0.22 |
| 21,000+ | $0.21 | $0.21 |
| 30,000+ | $0.21 | $0.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 3.5 V.
The transistor is available in SC-82A / SOT-343 surface mount package, with supplier device package PG-SOT343-3D.
The maximum junction temperature is 150°C.
It is listed as RoHS3 Compliant, but this status is unverified.
The maximum collector current (Ic) is 40 mA.
The typical power gain (Gp) is 22.5 dB.
The typical noise figure is 0.95 dB at 1.8 GHz.