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BFP450E6327 The BFP450E6327 is an NPN RF transistor from Infineon Technologies, designed for high-frequency applications up to 24 GHz with a typical gain of 15.5 dB.
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BFP450E6327

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Mfr Name: Infineon Technologies
Infineon Technologies
The BFP450E6327 is an NPN RF transistor from Infineon Technologies, designed for high-frequency applications up to 24 GHz with a typical gain of 15.5 dB.
✓ Total Stock: 3,000 pcs

BFP450E6327 Available from 1 distributor

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BFP450E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
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BFP450E6327 Description

Short technical summary and product information.

The Infineon Technologies BFP450E6327 is an NPN bipolar junction transistor optimized for RF and microwave applications. It is housed in a surface-mount PG-SOT343-4 package (SC-82A, SOT-343 case style) and supports a collector-emitter voltage of 5 V with a continuous collector current of 100 mA. The device features a transition frequency (fT) of 24 GHz, making it suitable for L-band and higher frequency designs.

 

Key electrical characteristics include a typical gain of 15.5 dB and a low noise figure of 1.25 dB at 1.8 GHz, which is advantageous for low-noise amplifier stages in communications equipment. The minimum DC current gain (hFE) is 60 at 50 mA collector current and 4 V Vce, ensuring consistent performance. Maximum power dissipation is rated at 450 mW, with an operating junction temperature up to 150°C.

 

This transistor is intended for surface-mount assembly on printed circuit boards. The small footprint of the PG-SOT343-4 package supports compact RF module designs. While RoHS and REACH compliance are indicated, these have not been independently verified from the datasheet.

BFP450E6327 Quick Information

Product Type: RF Transistor
Series: BFP450
Canonical Name: Infineon Technologies BFP450E6327 NPN RF Transistor
Subcategory: NPN RF Transistor

BFP450E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFP450E6327 Features

  • NPN RF transistor with 24 GHz fT.
  • 15.5 dB typical gain at 24 GHz.
  • Low 1.25 dB noise figure at 1.8 GHz.
  • Surface-mount PG-SOT343-4 package.
  • 5 V collector-emitter voltage rating.

BFP450E6327 Applications

  • Designed for L-band RF applications.
  • Ideal for low-noise amplifier stages.
  • Suitable for wireless communication circuits.
  • Used in RF driver and oscillator stages.

BFP450E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transition frequency (fT) of the BFP450E6327?

The transition frequency (fT) is 24 GHz.

What is the typical gain of this transistor?

The typical gain is 15.5 dB.

What is the noise figure of the BFP450E6327 at 1.8 GHz?

The typical noise figure is 1.25 dB at 1.8 GHz.

What package does the BFP450E6327 come in?

It comes in a surface-mount SC-82A, SOT-343 package with a supplier device package of PG-SOT343-4.

What are the maximum voltage and current ratings?

The maximum collector-emitter voltage is 5 V, and the maximum collector current is 100 mA.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

Is the BFP450E6327 RoHS compliant?

RoHS compliance is indicated as RoHS3 Compliant, but this is unverified and should be confirmed from the manufacturer.

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