| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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85 pcs
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85 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BFP450 is a surface-mount, high-linearity, wideband silicon NPN RF bipolar transistor. It is part of Infineon's fourth-generation RF bipolar transistor family, utilizing a grounded emitter (SIEGET™) design.
With a transition frequency (fT) of 24 GHz, the BFP450 is engineered for energy efficiency in applications operating up to 3 GHz. Key electrical characteristics include a minimum noise figure (NFmin) of 1.7 dB at 1.9 GHz (3V, 50mA), a high gain (Gma) of 15.5 dB at 1.9 GHz (3V, 90mA), and an output third-order intercept point (OIP3) of 31 dBm at 1.9 GHz (3V, 90mA).
This device is qualified for industrial applications according to JEDEC JESD47, JESD22, J-STD-020, and AEC-Q 101 standards. Potential applications include broadband amplifiers and low-noise, high-linearity amplifiers for sub-1 GHz ISM band applications.
The BFP450 is available in a SOT343 package, suitable for surface mounting. It is an ESD-sensitive device, requiring appropriate handling precautions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) of the BFP450 is 24 GHz.
The minimum noise figure (NFmin) is 1.7 dB at 1.9 GHz, 3 V, 50 mA.
The OIP3 is 31 dBm at 1.9 GHz, 3 V, 90 mA.
The BFP450 is available in the SOT343 package.