| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,080 pcs
|
6080 pcs | On Request | 1 | On Request | On Request | 11+03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The BFP420E6327 is an NPN bipolar RF transistor from Infineon Technologies designed for high-frequency applications. It features a transition frequency of 25GHz and a typical gain of 21dB, making it suitable for RF amplification and signal processing. The device has a low noise figure of 1.1dB at 1.8GHz, which is beneficial for receiver front-ends.
With a maximum collector-emitter voltage of 5V and a maximum collector current of 35mA, the transistor is intended for low-power RF circuits. The maximum power dissipation is 160mW, and the junction temperature can reach up to 150°C. The device is offered in a surface-mount SC-82A (SOT-343) package, ideal for compact PCB designs.
This transistor is commonly used in wireless communication equipment, RF amplifiers, oscillators, and other high-frequency circuits. Its small package and high-frequency performance make it a versatile choice for portable and space-constrained applications.
| Qty | Low | High |
|---|---|---|
| 1,288+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 5V.
It is available in SC-82A (SOT-343) surface-mount package.
The maximum junction temperature is 150°C.
According to Infineon, the part is RoHS3 compliant, but compliance status is unverified.
The transition frequency is 25GHz.
The typical gain is 21dB.
The noise figure is 1.1dB at 1.8GHz.