| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel |
The BFP405FH6327XTSA1 is a low noise silicon bipolar RF transistor from Infineon Technologies, designed for low current applications. It offers a minimum noise figure of 1.25 dB at 1.8 GHz and an outstanding maximum stable power gain of 22.5 dB at 1.8 GHz. The transistor has a transition frequency fT of 25 GHz and a DC current gain hFE of 60 to 130. It is housed in a Pb-free and halogen-free thin small flat package (TSFP-4) with visible leads, measuring 1.4 x 0.8 x 0.59 mm. The device is qualified according to AEC-Q101. Key electrical characteristics include a collector-emitter breakdown voltage of 4 to 5 V, maximum collector current of 25 mA, and total power dissipation of 75 mW. The transistor is suitable for RF amplifier and oscillator circuits requiring low noise and high gain at frequencies up to several GHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.36 | $0.36 |
| 10+ | $0.25 | $0.25 |
| 25+ | $0.22 | $0.22 |
| 100+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 4.5V at 25°C and 4.1V at -55°C. The collector-emitter voltage (VCES) is 15V.
4-SMD, Flat Leads (TSFP-4).
150°C.
Yes, it is Pb-free (RoHS compliant) and halogen-free.
Minimum noise figure is 1.25 dB at 1.8 GHz.
60 to 130 at IC=5mA, VCE=4V.
18 to 25 GHz.