| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,683 pcs
|
41683 pcs | On Request | 1 | On Request | On Request | 0932+ | On Request | On Request | |
|
2,973 pcs
|
2973 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Infineon Technologies BFP405E6327 is an NPN bipolar junction transistor (BJT) specifically designed for radio frequency (RF) applications. It operates with a collector-emitter breakdown voltage of 4.5V and can handle a maximum collector current of 25mA.
This RF transistor is housed in an SC70-4 package, making it suitable for compact electronic designs. Its NPN structure and RF designation indicate its suitability for high-frequency signal amplification and switching tasks within electronic circuits.
Key electrical characteristics include its NPN transistor type, a maximum collector-emitter breakdown voltage of 4.5V, and a maximum collector current of 25mA. These specifications define its performance envelope for RF signal processing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BFP405E6327 is an NPN transistor.
The maximum collector-emitter breakdown voltage is 4.5V.
The maximum collector current is 25mA.
The BFP405E6327 is in an SC70-4 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.