BFP196E6327HTSA1

The BFP196E6327HTSA1 is a low noise silicon bipolar RF transistor from Infineon Technologies, optimized for low noise and low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It operates at collector currents from 20 mA to 80 mA and is also suitable as a power amplifier for DECT and PCN systems.

Key electrical specifications include a maximum collector-emitter voltage of 12 V, collector-base voltage of 20 V, emitter-base voltage of 2 V, collector current of 150 mA, base current of 15 mA, and total power dissipation of 700 mW. The DC current gain (hFE) ranges from 70 to 140 at Ic=50mA, Vce=8V. The transition frequency (fT) is 5 GHz minimum and 7.5 GHz typical. Noise figure is 1.3 dB typical at 900 MHz and 2.3 dB at 1.8 GHz. Power gain (Gma) is 16.5 dB at 900 MHz and 10.5 dB at 1.8 GHz. The third order intercept point (IP3) is 32 dBm typical, and the 1 dB compression point is 19 dBm typical.

The transistor is housed in a surface mount SOT143-4 package (TO-253-4, TO-253AA) with a supplier device package of PG-SOT-143-3D. It is RoHS compliant (Pb-free) and has a moisture sensitivity level of 1 (unlimited). The ambient and storage temperature range is -65°C to 150°C, with a maximum junction temperature of 150°C and thermal resistance of 105 K/W.