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BFP193 E6327 The Infineon BFP193 E6327 is an NPN RF transistor designed for high-frequency applications. It features a 12V collector-emitter breakdown voltage and operates up to 8.5GHz.
Mfr Part #:

BFP193 E6327

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon BFP193 E6327 is an NPN RF transistor designed for high-frequency applications. It features a 12V collector-emitter breakdown voltage and operates up to 8.5GHz.
✓ Total Stock: 18,252 pcs
$ Price Range: $0.24

BFP193 E6327 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
18,150 pcs
On Request
18150 pcs On Request 1 On Request On Request 1508+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
102 pcs
On Request
102 pcs On Request 1 On Request On Request 17+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BFP193 E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gain
Lead Style
Mounting Type
Noise Figure
Operating Temperature
SVHC Present
Tape & Reel
Transistor Type
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BFP193 E6327 Description

Short technical summary and product information.

The Infineon BFP193 E6327 is a high-performance NPN RF transistor suitable for various radio frequency applications. It offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 65mA.

 

With a transition frequency of 8.5GHz and a typical gain of 22dB, this transistor is engineered for demanding RF circuits. The noise figure is typically between 0.9dB and 1.4dB across the 900MHz to 1.8GHz range. It has a maximum power dissipation of 450mW and a minimum DC current gain (hFE) of 70 at 15mA and 8V.

 

The BFP193 E6327 is housed in a compact SC-82A, SOT-343 surface mount package, making it ideal for space-constrained designs. It operates at a maximum junction temperature of 150°C and is supplied on tape and reel for automated assembly processes.

BFP193 E6327 Quick Information

Product Type: RF Transistor
Canonical Name: Infineon BFP193 E6327 NPN RF Transistor
Subcategory: RF Transistor

BFP193 E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFP193 E6327 Estimated Pricing

Qty Low High
1+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFP193 E6327 Features

  • NPN RF transistor with 12V breakdown voltage.
  • 8.5GHz transition frequency for high-speed applications.
  • Typical gain of 22dB at specified conditions.
  • Low noise figure between 0.9dB and 1.4dB.
  • Compact SOT-343 surface mount package.

BFP193 E6327 Applications

  • Suitable for RF amplifier circuits.
  • Used in high-frequency signal processing.
  • Ideal for RF switching applications.
  • Designed for compact electronic devices.

BFP193 E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the BFP193 E6327?

The collector-emitter breakdown voltage is 12V.

What type of transistor is the BFP193 E6327?

The BFP193 E6327 is an NPN transistor.

What is the maximum power dissipation of the BFP193 E6327?

The maximum power dissipation is 450mW.

What is the operating temperature range for this RF transistor?

The operating temperature is up to 150°C (TJ).

What is the transition frequency of the BFP193 E6327?

The transition frequency is 8.5GHz.

What is the typical gain of the BFP193 E6327?

The typical gain is 22dB.

What is the package type for the BFP193 E6327?

The package is SC-82A, SOT-343 and it is surface mount.

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