| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,932 pcs
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8932 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BFP193 is a silicon bipolar RF transistor specifically designed for low noise and high-gain amplifier applications operating up to 2 GHz. It is also suitable for linear broadband amplifiers.
Key electrical characteristics include a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. The transistor provides a maximum available power gain (Gma) of 18 dB at 900 MHz and 12 dB at 1.8 GHz. It also features a third-order intercept point (IP3) of 29.5 dBm and a 1dB compression point (P-1dB) of 13 dBm at 900 MHz.
The BFP193 is housed in a SOT-143 surface mount package. It is Pb-free and RoHS compliant. The device is sensitive to electrostatic discharge and requires appropriate handling precautions.
This RF transistor is ideal for applications requiring high performance in the RF spectrum, such as in communication systems and test equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Minimum 12 V.
80 mA.
6 to 8 GHz.
SOT-143 surface-mount package.
Storage temperature -55 to 150°C, junction temperature up to 150°C.
1 dB maximum.
580 mW at soldering point temperature ≤72°C.