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BFP182WE6327 NPN RF bipolar transistor from Infineon Technologies with 12V collector-emitter breakdown voltage, 35mA collector current, and 8GHz transition frequency. Designed for L-band applications.
Mfr Part #:

BFP182WE6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
NPN RF bipolar transistor from Infineon Technologies with 12V collector-emitter breakdown voltage, 35mA collector current, and 8GHz transition frequency. Designed for L-band applications.
✓ Total Stock: 4,500 pcs
$ Price Range: $0.13

BFP182WE6327 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
4,500 pcs
On Request
4500 pcs On Request 1 On Request On Request 0440+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BFP182WE6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
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BFP182WE6327 Description

Short technical summary and product information.

The BFP182WE6327 is an NPN RF bipolar junction transistor manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 12V and a collector current rating of 35mA, with a power dissipation of 250mW. The transistor offers a transition frequency of 8GHz and a typical gain of 22dB, making it suitable for RF amplification in L-band applications.

 

Electrical characteristics include a typical noise figure ranging from 0.9dB to 1.3dB across 900MHz to 1.8GHz, and a minimum DC current gain (hFE) of 70 at 10mA collector current and 8V collector-emitter voltage. The device is housed in a surface-mount SC-82A / SOT-343 package (PG-SOT343-4) and is rated for a maximum junction temperature of 150°C.

BFP182WE6327 Quick Information

Product Type: RF Bipolar Transistor
Canonical Name: Infineon BFP182WE6327 NPN RF Bipolar Transistor
Subcategory: NPN

BFP182WE6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

BFP182WE6327 Estimated Pricing

Qty Low High
2,358+ $0.13 $0.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFP182WE6327 Features

  • NPN RF transistor with 8GHz transition frequency.
  • 22dB typical gain for L-band amplification.
  • 0.9-1.3dB noise figure from 900MHz to 1.8GHz.
  • Surface mount SOT-343 package for compact designs.
  • 250mW power dissipation capability.

BFP182WE6327 Applications

  • Ideal for L-band RF amplifier circuits.
  • Used in low-noise RF front-end stages.
  • Suitable for wireless communication transceivers.

BFP182WE6327 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the package type of the BFP182WE6327?

The BFP182WE6327 is offered in an SC-82A / SOT-343 surface mount package, specifically the PG-SOT343-4 supplier device package.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

Is the BFP182WE6327 RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.

What is the transition frequency of this transistor?

The typical transition frequency (fT) is 8GHz.

What are the collector-emitter breakdown voltage and collector current ratings?

The collector-emitter breakdown voltage (VCEO) is 12V, and the collector current (IC) rating is 35mA.

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