| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
197,800 pcs
|
197800 pcs | On Request | 1 | On Request | On Request | 06+03+ | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Halogen Free | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Max) | |
| Storage Temperature | |
| Supplier Device Package | |
| Termination Style | |
| Transistor Type | |
| Voltage |
The BFP405F is a low noise silicon bipolar RF NPN transistor manufactured by Infineon Technologies. It is designed for low current RF applications and delivers a typical transition frequency (fT) of 25 GHz with a minimum of 18 GHz. The device achieves a minimum noise figure (NFmin) of 1.25 dB and a typical maximum stable gain (Gms) of 22.5 dB at 1.8 GHz, making it suitable for sensitive receiver front-ends.
Key electrical characteristics include a collector-emitter voltage of 4.5 V maximum at 25°C, collector-base voltage of 15 V, emitter-base voltage of 1.5 V, and a maximum collector current of 25 mA. The DC current gain (hFE) ranges from 60 to 130 at 5 mA collector current and 4 V collector-emitter voltage. The transistor also features low parasitic capacitances, such as 0.05 pF typical collector-base capacitance, and a third-order intercept point (IP3) of 14 dBm at 1.8 GHz.
The device is supplied in a compact 4-TSFP surface-mount package measuring 1.4 x 0.8 x 0.59 mm with visible leads. It can dissipate up to 75 mW total power at a soldering point temperature of 112°C, and has a maximum junction temperature of 150°C. The package is Pb-free (RoHS compliant) and halogen-free.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.19 | $0.19 |
| 6,000+ | $0.19 | $0.19 |
| 9,000+ | $0.18 | $0.18 |
| 15,000+ | $0.18 | $0.18 |
| 21,000+ | $0.18 | $0.18 |
| 30,000+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is rated at 4.5 V maximum at 25°C (4.1 V at -55°C), the collector-base voltage at 15 V, and the emitter-base voltage at 1.5 V.
It is available in a 4-SMD, flat leads package (4-TSFP) with dimensions 1.4 x 0.8 x 0.59 mm for surface-mount assembly.
The maximum junction temperature is 150°C. The storage temperature range is -55°C to +150°C.
Yes, the datasheet states it is Pb-free (RoHS compliant) and halogen-free.
The transition frequency is 25 GHz typical and 18 GHz minimum at IC=10 mA, VCE=3 V, f=2 GHz.
The minimum noise figure is 1.25 dB typical at 1.8 GHz with IC=2 mA, VCE=2 V.
The DC current gain (hFE) is 60 minimum, 95 typical, and 130 maximum at IC=5 mA, VCE=4 V.