BFP 193 E6327 The Infineon Technologies BFP193E6327HTSA1 is an NPN Silicon RF Bipolar Transistor designed for low noise, high-gain amplifiers up to 2 GHz. It features a typical fT of 8 GHz and a minimum noise figure of 1 dB at 900 MHz.
Mfr Part #:

BFP 193 E6327

Available from 1 distributors
Mfr Name: N-A
N-A
The Infineon Technologies BFP193E6327HTSA1 is an NPN Silicon RF Bipolar Transistor designed for low noise, high-gain amplifiers up to 2 GHz. It features a typical fT of 8 GHz and a minimum noise figure of 1 dB at 900 MHz.
✓ Total Stock: 4,301 pcs
$ Price Range: $1.17

BFP 193 E6327 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,301 pcs
4301 pcs On Request 1 On Request On Request N/A On Request On Request

BFP 193 E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gain
Mounting Type
SVHC Present

BFP 193 E6327 Description

Short technical summary and product information.

The Infineon Technologies BFP193E6327HTSA1 is an NPN Silicon RF Bipolar Transistor suitable for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It operates with a collector-emitter breakdown voltage of 12V and a collector current of 80mA.

 

Key electrical characteristics include a typical transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This transistor is designed for applications requiring high performance in RF front-ends.

 

The component is housed in a SOT-143-4 surface mount package. It is RoHS 3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

 

Target applications include wireless communications, LNA in RF Front-end, cellular and cordless phones, DECT, Tuners, FM, and RF modems.

BFP 193 E6327 Quick Information

Product Type: RF Bipolar Transistor
Series: BFP193
Canonical Name: Infineon Technologies BFP193E6327HTSA1 RF Bipolar Transistor
Subcategory: RF Bipolar Transistors

BFP 193 E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFP 193 E6327 Estimated Pricing

Qty Low High
1+ $1.17 $1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFP 193 E6327 Features

  • Low noise, high-gain amplifiers up to 2 GHz.
  • Typical fT of 8 GHz.
  • Minimum NFmin of 1 dB at 900 MHz.
  • SOT-143-4 surface mount package.
  • RoHS 3 compliant.

BFP 193 E6327 Applications

  • Used in wireless communication systems.
  • Ideal for RF front-end LNAs.
  • Suitable for cellular and cordless phones.
  • Applicable in DECT and FM modems.
  • Used in RF tuners.

BFP 193 E6327 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the typical transition frequency (fT) of the BFP193E6327HTSA1?

The typical transition frequency (fT) of the BFP193E6327HTSA1 is 8 GHz.

What is the minimum noise figure for the BFP193E6327HTSA1 at 900 MHz?

The minimum noise figure (NFmin) for the BFP193E6327HTSA1 at 900 MHz is 1 dB.

What is the collector-emitter breakdown voltage for this RF transistor?

The collector-emitter breakdown voltage is 12 V.

What is the package type for the BFP193E6327HTSA1?

The BFP193E6327HTSA1 is supplied in a SOT-143-4 package.

Is the BFP193E6327HTSA1 RoHS compliant?

Yes, the BFP193E6327HTSA1 is RoHS 3 compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

Home

Categories