| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,301 pcs
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4301 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| Manufacturer Name | |
| Gain | |
| Mounting Type | |
| SVHC Present |
The Infineon Technologies BFP193E6327HTSA1 is an NPN Silicon RF Bipolar Transistor suitable for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It operates with a collector-emitter breakdown voltage of 12V and a collector current of 80mA.
Key electrical characteristics include a typical transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This transistor is designed for applications requiring high performance in RF front-ends.
The component is housed in a SOT-143-4 surface mount package. It is RoHS 3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
Target applications include wireless communications, LNA in RF Front-end, cellular and cordless phones, DECT, Tuners, FM, and RF modems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical transition frequency (fT) of the BFP193E6327HTSA1 is 8 GHz.
The minimum noise figure (NFmin) for the BFP193E6327HTSA1 at 900 MHz is 1 dB.
The collector-emitter breakdown voltage is 12 V.
The BFP193E6327HTSA1 is supplied in a SOT-143-4 package.
Yes, the BFP193E6327HTSA1 is RoHS 3 compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.