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BFP 182 E7764

NPN silicon RF transistor designed for low noise, high-gain broadband amplifiers. Features 12V breakdown voltage, 8GHz transition frequency, and 0.9dB noise figure at 900MHz.

✓ Total Stock: 1,327 pcs

BFP 182 E7764 Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	1,327 pcs On Request	1327 pcs	On Request	1	On Request	On Request	09+	On Request	On Request

BFP 182 E7764 Description

Short technical summary and product information.

This is an NPN silicon RF transistor from Infineon Technologies, designed for low noise and high gain broadband amplifier applications. It operates with a collector current range suitable for 1 mA to 20 mA, providing a transition frequency of up to 8 GHz and a typical noise figure of 0.9 dB at 900 MHz.

Key electrical characteristics include a collector-emitter breakdown voltage of 12 V, collector-base breakdown voltage of 20 V, and an emitter-base breakdown voltage of 2 V. The DC current gain ranges from 70 to 140 at 10 mA collector current. The device offers a maximum stable power gain of 22 dB at 900 MHz and a maximum available gain of 16.5 dB at 1.8 GHz.

The transistor is housed in a surface-mount SOT-143 package (PG-SOT-143-3D) with four leads. It is RoHS compliant and lead-free, with an operating junction temperature up to 150°C. The part is qualified according to AEC Q101, making it suitable for automotive applications.

BFP 182 E7764 Quick Information

Product Type: RF Transistor

Canonical Name: Infineon Technologies BFP 182 E7764 NPN Silicon RF Transistor

Subcategory: RF Transistor

BFP 182 E7764 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Lead Free

BFP 182 E7764 Features

NPN silicon RF transistor with 8 GHz transition frequency.
Low noise figure of 0.9 dB at 900 MHz.
Maximum collector current of 35 mA.
Surface mount SOT-143 package.
RoHS compliant and lead-free.

BFP 182 E7764 Applications

Ideal for low noise broadband amplifiers.
Suitable for RF front-end circuits up to 2 GHz.
Used in automotive RF applications (AEC Q101).

BFP 182 E7764 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating voltage of this transistor?

The collector-emitter breakdown voltage (VCEO) is 12 V minimum, collector-base breakdown voltage (VCBO) is 20 V minimum, and emitter-base breakdown voltage (VEBO) is 2 V minimum.

What package does this transistor come in?

The transistor is available in a surface mount SOT-143 package (supplier device package PG-SOT-143-3D).

What is the operating temperature range?

The ambient and storage temperature range is -65°C to 150°C. The maximum junction temperature is 150°C.

Is this component RoHS compliant?

Yes, it is RoHS3 compliant and lead-free, as verified by the datasheet.

What is the transition frequency of the BFP 182 E7764?

The transition frequency (fT) is typically 8 GHz, with a minimum of 6 GHz at IC=15 mA and VCE=8 V.

What is the maximum collector current?

The maximum collector current is 35 mA, and the maximum base current is 4 mA.

What is the noise figure of this transistor?

The typical noise figure is 0.9 dB at 900 MHz and 1.3 dB at 1.8 GHz under IC=3 mA and VCE=8 V.

Category	Transistors - Bipolar (BJT) - RF
Manufacturer Name	Infineon Technologies
AEC Qualified	Yes
Automotive Grade	Yes
Current	35mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 8V
Frequency	8GHz
Gain	22dB
Industrial Grade	Yes
Medical Grade	No
Military Grade	No
Mounting Type	Surface Mount
Noise Figure	0.9 dB @ 900 MHz, 1.3 dB @ 1.8 GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Operating Temperature	150°C (TJ)
Power	250mW
Power Dissipation	250 mW
Storage Temperature	-65°C ~ 150°C
Supplier Device Package	PG-SOT-143-3D
Termination Style	SMD (Gull Wing)
Transistor Type	NPN
Voltage	12V