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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28,000 pcs
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28000 pcs | On Request | 1 | On Request | On Request | 14+15+ | On Request | On Request |
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The Infineon BFN39H6327 is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. It features a maximum collector-emitter breakdown voltage of 300V and a continuous collector current rating of 200mA, making it suitable for medium-voltage circuits.
With a power dissipation of 1.5W and a transition frequency of 100MHz, this transistor offers reliable performance in linear and switching designs. The minimum DC current gain (hFE) of 40 at 10mA collector current and 10V collector-emitter voltage ensures consistent amplification characteristics.
The device is supplied in a surface-mount SOT-223 package (TO-261-4, TO-261AA), which supports automated assembly and compact PCB layouts. The maximum junction operating temperature is 150°C.
The maximum collector-emitter breakdown voltage is 300V.
The maximum collector current is 200mA.
It uses a surface-mount SOT-223 package (TO-261-4, TO-261AA).
The maximum junction operating temperature is 150°C.
Yes, it is listed as RoHS3 compliant.