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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
78,000 pcs
|
78000 pcs | On Request | 1 | On Request | On Request | 14+15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BFN38E6327 is a small signal bipolar junction transistor manufactured by Infineon Technologies. It is designed for general purpose switching and amplification applications. The transistor features a collector-emitter breakdown voltage of 300V and a continuous collector current rating of 200mA, making it suitable for high voltage circuits. Power dissipation is rated at 1.5W, and the device can operate at junction temperatures up to 150°C.
Electrical characteristics include a minimum DC current gain (hFE) of 40 at 10mA collector current and 10V collector-emitter voltage. The maximum Vce saturation voltage is 500mV at a base current of 2mA and collector current of 20mA. The transition frequency is 70MHz, indicating adequate performance for moderate frequency applications.
The transistor is housed in a surface mount TO-261-4 package, also known as SOT223-4, with supplier device package PG-SOT223-4. The mounting type is surface mount, suitable for automated assembly processes. This package offers a compact footprint for space-constrained designs.
300V.
TO-261-4 (TO-261AA) surface mount package, also known as SOT223-4.
150°C.
RoHS3 compliant (unverified, low confidence).
1.5W.
40 at 10mA collector current and 10V collector-emitter voltage.
70MHz.