BFN27E6327HTSA1 Infineon BFN27E6327HTSA1 is a PNP silicon high-voltage transistor with 300V collector-emitter breakdown voltage and 200mA collector current. It comes in a surface-mount SOT23 package.
Mfr Part #:

BFN27E6327HTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BFN27E6327HTSA1 is a PNP silicon high-voltage transistor with 300V collector-emitter breakdown voltage and 200mA collector current. It comes in a surface-mount SOT23 package.
Total Stock: 7,386 pcs
$ Price Range: $0.09

BFN27E6327HTSA1 Available from 1 distributor

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BFN27E6327HTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101
Base Current (DC)
Base-Emitter Saturation Voltage (Max)
Collector-Base Breakdown Voltage (Min)
Collector-Base Capacitance (Typical)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage (Min)
Emitter-Base Cutoff Current (Max)
Frequency
ICBO (Maximum @ VCB=250 V, IE=0, TA=150 °C)
ICBO (Maximum @ VCB=250 V, IE=0, TA=25 °C)
Lead Style
Mounting Type
Operating Temperature
Peak Base Current
Peak Collector Current
Power
Storage Temperature Range
Supplier Device Package
Thermal Resistance (Junction to Soldering Point)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hFE (Minimum @ IC=1 mA, VCE=10 V)
hfe (Minimum @ IC=10 mA, VCE=10 V)

BFN27E6327HTSA1 Description

Short technical summary and product information.

The Infineon BFN27E6327HTSA1 is a PNP silicon high-voltage transistor designed for applications requiring high breakdown voltage and low saturation voltage. It features a minimum collector-emitter breakdown voltage of 300V and a maximum collector current of 200mA, with a peak current capability of 500mA. The device offers a DC current gain of 40 minimum at 10mA and a typical transition frequency of 100MHz.

 

This transistor is suitable for video output stages in TV sets and switching power supplies. It has a low collector-emitter saturation voltage of 0.5V maximum at 20mA, contributing to efficient operation. The total power dissipation is 360mW at a soldering point temperature of 74°C, with a maximum junction temperature of 150°C.

 

The BFN27 is packaged in a surface-mount SOT23-3 package (also known as TO-236-3 or SC-59) with gull wing leads. It is Pb-free and RoHS compliant, and qualified according to AEC Q101 for automotive applications. The complementary NPN type is the BFN26.

BFN27E6327HTSA1 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BFN27
Canonical Name: Infineon BFN27 PNP Silicon High-Voltage Transistor
Subcategory: Single Bipolar Junction Transistors

BFN27E6327HTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected

BFN27E6327HTSA1 Estimated Pricing

Qty Low High
24,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFN27E6327HTSA1 Features

  • PNP silicon high-voltage bipolar transistor.
  • 300V collector-emitter breakdown voltage minimum.
  • 200mA continuous collector current rating.
  • Low 0.5V collector-emitter saturation voltage.
  • AEC-Q101 qualified for automotive applications.

BFN27E6327HTSA1 Applications

  • Suitable for video output stages in TV sets.
  • Used in switching power supply circuits.
  • Ideal for high-voltage general purpose switching.
  • Applicable in automotive electronic modules.

BFN27E6327HTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BFN27?

The minimum collector-emitter breakdown voltage (V(BR)CEO) is 300V at IC=1mA.

What is the maximum collector current rating?

The maximum continuous collector current (IC) is 200mA, with a peak current (ICM) of 500mA for tp ≤ 10ms.

What package is the BFN27 available in?

The BFN27 is available in a surface-mount SOT23-3 package (TO-236-3, SC-59).

Is the BFN27 RoHS compliant?

Yes, the BFN27 is Pb-free and RoHS compliant as per the datasheet.

What is the complementary NPN type for the BFN27?

The complementary NPN type is the BFN26 from Infineon Technologies.

What is the maximum power dissipation of the BFN27?

The maximum total power dissipation (Ptot) is 360mW at a soldering point temperature of 74°C.

Is the BFN27 qualified for automotive applications?

Yes, the BFN27 is qualified according to AEC Q101.

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