| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28,107 pcs
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28107 pcs | On Request | 1 | On Request | On Request | 06+04+ | On Request | On Request |
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The BFN24E6327 is a small signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is designed for general-purpose switching and amplification applications in compact surface-mount assemblies.
Key electrical specifications include a collector-emitter voltage rating of 250 V, a collector current rating of 200 mA, and a power dissipation of 360 mW. The DC current gain (hFE) is at least 40 at 30 mA collector current and 10 V collector-emitter voltage, while the collector-emitter saturation voltage is limited to 400 mV at 20 mA collector current and 2 mA base current. The transistor also provides a 70 MHz transition frequency, making it suitable for low-frequency switching and signal amplification.
The device is housed in a TO-236-3 (SOT-23-3 / SC-59) surface-mount package and is rated for a maximum junction temperature of 150°C. The PG-SOT23-3-1 supplier package supports automated assembly processes.
The collector-emitter voltage rating is 250V.
The BFN24E6327 is available in a TO-236-3 (SC-59, SOT-23-3) surface-mount package, with supplier device package PG-SOT23-3-1.
The maximum junction temperature is 150°C.
The existing product data lists the BFN24E6327 as RoHS3 compliant, though this has not been independently verified.
The maximum collector current is 200mA.
The power dissipation rating is 360mW.
The transition frequency is 70MHz.