BFN 19 E6327 Infineon BFN19 is a PNP silicon high-voltage transistor rated for 300V VCEO and 200mA continuous collector current, in surface-mount SOT-89 package.
Mfr Part #:

BFN 19 E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BFN19 is a PNP silicon high-voltage transistor rated for 300V VCEO and 200mA continuous collector current, in surface-mount SOT-89 package.
Total Stock: 2,000 pcs

BFN 19 E6327 Available from 1 distributor

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2,000 pcs
2000 pcs On Request 1 On Request On Request 1331+ On Request On Request

BFN 19 E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector-Base Capacitance (Typical)
Collector-Base Cutoff Current (Max @ 250V)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Thermal Resistance (Junction to Soldering Point)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BFN 19 E6327 Description

Short technical summary and product information.

The Infineon BFN19 is a PNP silicon high-voltage bipolar junction transistor designed for applications requiring high breakdown voltage and low saturation voltage. With a maximum collector-emitter voltage (VCEO) of 300V and continuous collector current rating of 200mA (500mA peak), it suits video output stages in TV sets and switching power supplies.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 30mA collector current and 10V VCE, a typical transition frequency (fT) of 100MHz, and a low collector-emitter saturation voltage (VCEsat) of 500mV maximum at 20mA/2mA. The device features a collector-base capacitance of 2.5pF typical and an emitter-base breakdown voltage of 5V minimum.

 

The BFN19 is housed in a TO-243AA (PG-SOT89) surface-mount package with a maximum power dissipation of 1W (Ts ≤ 130°C) and a junction temperature rating up to 150°C. It is qualified according to AEC Q101, suitable for automotive and industrial applications. The datasheet indicates Pb-free (RoHS compliant) construction.

BFN 19 E6327 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BFN19 PNP Silicon High-Voltage Transistor
Subcategory: Single BJT

BFN 19 E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BFN 19 E6327 Features

  • 300V maximum collector-emitter voltage.
  • 200mA continuous collector current.
  • Low VCEsat of 500mV max at 20mA.
  • 100MHz typical transition frequency.
  • AEC Q101 qualified for automotive.

BFN 19 E6327 Applications

  • Used in video output stages of TV sets.
  • Suitable for switching power supplies.
  • Ideal for high-voltage driver circuits.

BFN 19 E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BFN19?

The maximum VCEO is 300V.

What is the maximum collector current rating?

The maximum continuous collector current is 200mA.

What is the package type of the BFN19?

The BFN19 is housed in a TO-243AA (PG-SOT89) surface-mount package.

What is the operating junction temperature range?

The maximum junction temperature is 150°C.

Is the BFN19 RoHS compliant?

The datasheet states the package is Pb-free (RoHS compliant).

What is the complementary NPN type?

The complementary NPN type is the BFN18.

What is the typical transition frequency?

The typical transition frequency is 100MHz.

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