| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Tape & Reel | |
| Transistor Type |
The BFM520.115 from NXP Semiconductors is a dual NPN RF transistor designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 8V and boasts a transition frequency of 9GHz, making it suitable for RF circuits.
This device offers a typical noise figure of 2.1dB at 900MHz and a maximum power rating of 1W. The minimum DC current gain (hFE) is 60 at 20mA and 6V, with a maximum collector current of 70mA. The operating temperature range extends up to 175°C.
The BFM520.115 comes in a 6-TSSOP, SC-88, or SOT-363 package, designed for surface mounting. It is supplied on tape and reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BFM520.115 is offered in 6-TSSOP, SC-88, and SOT-363 surface mount packages.
The maximum collector-emitter voltage is 8V.
The transition frequency is 9 GHz minimum.
The noise figure ranges from 1.2 dB minimum to 2.1 dB typical at 900 MHz.
The maximum power dissipation is 1W.
The minimum DC current gain (hFE) is 60 at 20 mA collector current and 6V collector-emitter voltage.
It contains two NPN transistors in a single package (2 NPN).