| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,622 pcs
|
2622 pcs | On Request | 1 | On Request | On Request | 0851+ | On Request | On Request | |
|
2,130 pcs
|
2130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFM505 from NXP Semiconductors is an RF Bipolar Transistor with an NPN polarity, built on Silicon technology. It is engineered for operation at frequencies up to 9000 MHz.
Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 8V and a minimum DC Collector/Base Gain (hFE) of 60. The continuous collector current is rated at 18mA, with a power dissipation of 500mW. The transistor operates within a temperature range of -65 C to +150 C.
This component is supplied in a surface mount configuration, specifically in the SC-88 package, supplied on a reel. The dual configuration is suitable for various RF circuit designs.
This RF Bipolar Transistor is suitable for applications requiring high-frequency signal amplification and switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BFM505 operates at frequencies up to 9000 MHz.
The maximum collector-emitter voltage (VCEO) for the BFM505 is 8V.
The minimum DC collector/base gain (hFE) for the BFM505 is 60.
The continuous collector current for the BFM505 is 18mA.
The power dissipation for the BFM505 is 500mW.
The BFM505 operates between -65 C and +150 C.
The BFM505 is an NPN RF Bipolar Transistor made of Silicon.