| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
53 pcs
|
53 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Fall Time (Typ) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Rise Time (Typ) | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) |
The BFL4026-1E is an N-Channel Power MOSFET designed and manufactured by On Semiconductor. It is rated for a maximum drain-to-source voltage of 900V and a continuous drain current of 3.5A when the case temperature is held at 25°C (package limited). The chip itself is capable of 5A continuous current, limited only by the maximum channel temperature of 150°C. The device offers a maximum on-resistance of 3.6Ω at a gate drive of 10V and 2.5A drain current, with a typical value of 2.8Ω.
Key electrical characteristics include a total gate charge of 33nC typical, input capacitance of 650pF, and output capacitance of 100pF. The MOSFET is capable of handling avalanche energy up to 132mJ in a single pulse (Vdd=50V, L=10mH). Switching speeds are characterized by a turn-on delay time of 14ns, rise time of 37ns, turn-off delay time of 117ns, and fall time of 39ns under test conditions of Vdd=200V, Id=2.5A, Vgs=10V, Rg=50Ω.
The device is housed in a TO-220-3 Full Pack package (also designated TO-220F-3FS), which is a through-hole mounting type with a lead spacing of 2.54mm. The full-pack construction provides isolation between the mounting tab and the die, simplifying heatsink attachment. The operating junction temperature range is -55°C to 150°C. This MOSFET is suitable for high-voltage switching applications such as power supplies, inverters, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.86 | $2.86 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 900 V.
The device is available in a TO-220-3 Full Pack package, also designated as TO-220F-3FS, with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The device is marked as RoHS3 Compliant, but this status is unverified and should be treated with low confidence.
The maximum on-resistance is 3.6 Ω at Vgs=10V and Id=2.5A, with a typical value of 2.8 Ω.
The typical total gate charge is 33 nC at Vgs=10V and Id=5A.
The typical input capacitance (Ciss) is 650 pF at Vds=30V and f=1MHz.