BFR106E6327
Infineon Technologies
The Infineon Technologies BFR106E6327 is an NPN bipolar RF transistor. It features a 16V collector-emitter voltage and a 0.21A collector current.
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60,267 pcs
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60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFG96 is an NPN 5GHz wideband transistor manufactured by Philips Semiconductors. This RF transistor is designed for high-frequency applications.
Key electrical specifications include a maximum collector current of 75mA and a collector-emitter voltage of 15V. The device has a maximum power dissipation of 700mW and can operate at temperatures up to 175°C.
This component is suitable for various RF circuit designs requiring a reliable NPN transistor. Its wideband characteristics make it versatile for different signal amplification and switching tasks.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
75mA.
15V.
700mW.
175°C.
5GHz.
NPN wideband RF transistor.