BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFG67 from NXP Semiconductors is an NPN silicon transistor designed for high-frequency applications. It operates in the GHz range and is suitable for wideband applications such as satellite TV tuners and portable RF communications equipment.
Key electrical characteristics include a transition frequency of 8 GHz and a maximum unilateral power gain of 17 dB at 1 GHz. The transistor also features a low noise figure, with values of 1.3 dB at 1 GHz and 2.2 dB at 2 GHz.
This device is available in a 4-pin SOT143B plastic package. It utilizes gold metallization to ensure excellent reliability. The BFG67 is offered with in-line emitter pinning, while the BFG67/X variant features cross emitter pinning. A version with reverse pinning, BFG67/XR, is also available upon request.
With its robust construction and high-frequency performance, the BFG67 is a reliable choice for demanding RF designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) of the BFG67 transistor is 8 GHz.
The maximum unilateral power gain (GUM) for the BFG67 transistor is 17 dB at 1 GHz.
The noise figure (F) of the BFG67 transistor is 1.3 dB at 1 GHz.
The BFG67 transistor is supplied in a SOT143B package.
The RoHS status of the BFG67 transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BFG67 transistor is 1 Unlimited.