BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
295 pcs
|
295 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type |
The BFG67 is an NPN silicon transistor from NXP Semiconductors (formerly Philips Semiconductors), suitable for wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment. It is housed in a 4-pin SOT143B plastic package.
Key electrical characteristics include a typical transition frequency (fT) of 8 GHz at 15 mA collector current and 8 V collector-emitter voltage. The device offers a high power gain (GUM) of 17 dB at 1 GHz and a low noise figure (F) of 1.3 dB at 1 GHz and 2.2 dB at 2 GHz under specified test conditions. The collector-emitter voltage (VCEO) is rated up to 10 V, and the collector current (IC) is up to 50 mA.
Gold metallization ensures excellent reliability. The transistor is available in different pinning configurations: BFG67 with in-line emitter pinning, BFG67/X with cross emitter pinning, and BFG67/XR with reverse pinning (available on request).
This component is designed for surface mount applications. Its robust construction and performance characteristics make it suitable for demanding RF circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10 V.
50 mA.
8 GHz.
1.3 dB typical.
17 dB typical at 1 GHz.
SOT143B surface mount package.
20 V.