| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The BFG65 is an NPN 8 GHz wideband transistor manufactured by NXP Semiconductors. This RF transistor is designed for high-frequency applications, featuring a maximum collector current of 50mA and a maximum collector-emitter voltage of 10V.
With a maximum power dissipation of 300mW and a maximum operating temperature of 175°C, the BFG65 is suitable for demanding environments. The component has 4 terminals and is classified under the RF Transistor category.
Similar parts include the BFG67 and BFG67W from NXP Semiconductors, and the BFG67 from Vishay Silicon. This component is part of the discrete semiconductor products family, specifically within the transistors, FETs, MOSFETs - RF subcategory.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.20 | $8.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the BFG65 transistor is 50mA.
The maximum collector-emitter voltage for the BFG65 is 10V.
The maximum power dissipation for the BFG65 is 300mW.
The BFG65 transistor can operate up to a maximum temperature of 175°C.
The BFG65 transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BFG65 is Level 1.
The REACH status for the BFG65 is REACH Unaffected.