DistyParts Icon
BFG540/X,215 NPN RF transistor for wideband applications up to 9 GHz, with 15 V collector-emitter voltage and 120 mA collector current.
Mfr Part #:

BFG540/X,215

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
NPN RF transistor for wideband applications up to 9 GHz, with 15 V collector-emitter voltage and 120 mA collector current.
✓ Total Stock: 4,029 pcs

BFG540/X,215 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
2,059 pcs
On Request
2059 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,970 pcs
On Request
1970 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BFG540/X,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
View Similar Products (0)

BFG540/X,215 Description

Short technical summary and product information.

The BFG540/X,215 is an NPN silicon planar epitaxial transistor designed for wideband RF applications up to 9 GHz. It features a maximum collector-emitter voltage of 15 V and a maximum collector current of 120 mA, with a total power dissipation of 400 mW (up to 60°C). The transistor offers a typical DC current gain (hFE) of 100 to 250, a typical transition frequency of 9 GHz, and a typical maximum unilateral power gain of 18 dB at 900 MHz. The noise figure is typically between 1.3 dB and 2.4 dB at 900 MHz.

 

This transistor is intended for applications such as analog and digital cellular telephones, cordless telephones, radar detectors, satellite TV tuners, and MATV/CATV amplifiers. It is also suitable for repeater amplifiers in fiber-optic systems.

 

The device is available in a surface-mount SOT-143B package with gold metallization for excellent reliability. It is RoHS3 compliant, REACH unaffected, and has an MSL of 1 (unlimited).

BFG540/X,215 Quick Information

Product Type: RF Transistor - Bipolar (BJT)
Canonical Name: BFG540/X,215 NPN RF Transistor
Subcategory: Bipolar Junction Transistor (BJT)

BFG540/X,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFG540/X,215 Features

  • NPN RF transistor with 9 GHz transition frequency.
  • Maximum collector-emitter voltage of 15 V.
  • Collector current up to 120 mA.
  • Power dissipation of 400 mW.
  • Surface-mount SOT-143B package.

BFG540/X,215 Applications

  • Ideal for analog and digital cellular telephones.
  • Suitable for cordless telephones (CT1, CT2, DECT).
  • Used in radar detectors and satellite TV tuners.
  • Applicable in MATV/CATV amplifiers.
  • Works in repeater amplifiers for fiber-optic systems.

BFG540/X,215 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BFG540/X,215?

15 V (VCES, with RBE = 0).

What package is the BFG540/X,215 available in?

SOT-143B surface-mount package.

What is the maximum junction temperature of this transistor?

150°C.

Is the BFG540/X,215 RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the transition frequency of the BFG540/X,215?

9 GHz typical.

What is the typical DC current gain (hFE) of this transistor?

100 to 250 (typical 120).

What is the noise figure at 900 MHz?

1.3 dB to 2.4 dB typical.

Home
Account

Categories