| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,086 pcs
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4086 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request | |
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1,299 pcs
|
1299 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,299 pcs
|
1299 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BFG520 is a bipolar RF transistor categorized as NPN type. It is designed for applications requiring high-frequency performance, with a transition frequency of 5.5GHz.
Key electrical characteristics include a maximum collector-emitter breakdown voltage of 15V and a maximum collector current of 100mA. The transistor offers a minimum DC current gain (hFE) of 25 at 70mA and 10V. It can handle a maximum power of 1W and operates at temperatures up to 175°C.
This component is supplied in a surface mount package, specifically TO-261-4, TO-261AA (SC-73), making it suitable for automated assembly processes. Its robust design and specifications make it a reliable choice for various RF circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the BFG520 is 15V.
The transition frequency of the BFG520 is 5.5GHz.
The BFG520 has a maximum power rating of 1W.
The minimum DC current gain (hFE) for the BFG520 is 25 at 70mA collector current and 10V collector-emitter voltage.
The maximum collector current for the BFG520 is 100mA.
The BFG520 can operate at temperatures up to 175°C.
The BFG520 is an NPN type bipolar RF transistor.