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BFG425W The BFG425W is an NPN wideband transistor from NXP Semiconductors, designed for high-frequency applications. It offers excellent gain and low noise characteristics.
Mfr Part #:

BFG425W

Available from 3 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The BFG425W is an NPN wideband transistor from NXP Semiconductors, designed for high-frequency applications. It offers excellent gain and low noise characteristics.
✓ Total Stock: 24,313 pcs
$ Price Range: $1.93

BFG425W Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
15,841 pcs
On Request
15841 pcs On Request 1 On Request On Request 1301+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
4,406 pcs
On Request
4406 pcs On Request 1 On Request On Request 2012 On Request On Request
Rayichip ✓
Non-Authorised Inventory information
4,066 pcs
On Request
4066 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BFG425W Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Noise Figure
Storage Temperature
Tape & Reel
Thermal Resistance
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BFG425W Description

Short technical summary and product information.

The BFG425W is an NPN double polysilicon wideband transistor from NXP Semiconductors, suitable for low voltage applications. It is housed in a plastic 4-pin SOT343R package.

 

This transistor boasts a high transition frequency of 25 GHz and a maximum power gain of 20 dB at 2 GHz, making it ideal for RF front-end and wideband applications. Its low noise figure of 1.2 dB at 2 GHz further enhances its suitability for sensitive receiver circuits.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of -4.5 V and a collector current (IC) of up to 30 mA. The feedback capacitance (Cre) is a low 95 fF, contributing to its high-frequency performance. The emitter is designed as a thermal lead for improved heat dissipation.

 

Applications for the BFG425W include analog and digital cellular telephones, cordless telephones (PHS, DECT), radar detectors, pagers, satellite television tuners (SATV), and high-frequency oscillators. It is supplied in anti-static packing to prevent electrostatic discharge damage.

BFG425W Quick Information

Product Type: NPN Transistor
Canonical Name: BFG425W NPN 25 GHz Wideband Transistor
Subcategory: NPN

BFG425W Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFG425W Estimated Pricing

Qty Low High
1+ $1.93 $1.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFG425W Features

  • NPN 25 GHz wideband transistor.
  • Very high power gain.
  • Low noise figure.
  • High transition frequency.
  • SOT343R surface mount package.

BFG425W Applications

  • Ideal for RF front-end circuits.
  • Suitable for wideband applications.
  • Used in cellular telephones.
  • Applicable to radar detectors.
  • Useful for high frequency oscillators.

BFG425W FAQs

4 frequently asked questions generated from this part’s specifications.
What is the transition frequency of the BFG425W transistor?

The transition frequency (fT) is 25 GHz.

What is the maximum power gain for the BFG425W at 2 GHz?

The maximum power gain (Gmax) is 20 dB.

What is the noise figure of the BFG425W at 2 GHz?

The noise figure (F) is 1.2 dB.

What is the package type for the BFG425W?

The package type is SOT343R.

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