| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,510 pcs
|
1510 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Noise Figure | |
| Storage Temperature |
The BFG410W from Philips is an NPN double polysilicon wideband transistor suitable for low voltage applications. It is housed in a 4-pin SOT343R plastic package.
Key electrical characteristics include a very high power gain (Gmax typically 21 dB at 2 GHz), a low noise figure (F typically 1.2 dB at 2 GHz), and a high transition frequency (fT typically 22 GHz at 2 GHz).
This transistor is designed for RF front-end applications and wideband systems such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, satellite television tuners, and high-frequency oscillators.
The SOT343R package is a surface-mount type. The emitter pins serve as thermal leads, contributing to efficient heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 4.5 V, and the maximum collector-base voltage (VCBO) is 10 V.
The BFG410W is available in the SOT343R surface-mount package.
The storage temperature range is -65 to +150°C, and the maximum operating junction temperature is 150°C.
The typical DC current gain (hFE) is 80 at IC=10 mA, VCE=2V. The typical maximum power gain (Gmax) is 21 dB at 2 GHz.
The typical noise figure (F) is 1.2 dB at 2 GHz (IC=1 mA, VCE=2V, ΓS=Γopt).
The maximum total power dissipation is 54 mW at a soldering point temperature of 110°C.
The typical transition frequency (fT) is 22 GHz at IC=10 mA, VCE=2V.