| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,121 pcs
|
2121 pcs | On Request | 1 | On Request | On Request | 2010 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| SVHC Present |
The Infineon BFG196E6327 is a high-frequency bipolar junction transistor (BJT) designed for RF applications. This component is categorized under Transistors - Bipolar (BJT) - RF, indicating its suitability for signal amplification and switching in radio frequency circuits.
Key specifications include RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1, signifying its robustness and ease of handling during assembly processes. The REACH status is noted as unaffected. While specific electrical characteristics like operating voltage and temperature are not detailed here, its classification suggests it is engineered for performance in demanding RF environments.
This transistor is part of Infineon's portfolio, a recognized manufacturer in the semiconductor industry. Its intended applications likely span various wireless communication systems, radar, and other high-frequency electronic designs where reliable performance is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BFG196E6327 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.