| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The BFG 19S E6327 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It is designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunication systems operating up to 1.5 GHz. The transistor supports collector currents from 10 mA to 70 mA in typical applications.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 15 V, collector current rating of 210 mA, and total power dissipation of 1 W at case temperatures up to 75°C. The DC current gain (hFE) ranges from 70 to 140 at 70 mA and 8 V, while the transition frequency (fT) is typically 5.5 GHz.
The device is supplied in a SOT223-4 surface mount package (PG-SOT223-4, TO-261AA) and is RoHS compliant. It is also qualified according to AEC Q101, making it suitable for automotive applications.
With its low noise figure of 2 dB at 900 MHz and 3 dB at 1.8 GHz, and typical maximum available gain of 14 dB and 8.5 dB at these frequencies, the BFG 19S E6327 is well suited for RF amplifier stages in communications equipment.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.25 | $0.25 |
| 6,000+ | $0.25 | $0.25 |
| 9,000+ | $0.24 | $0.24 |
| 15,000+ | $0.24 | $0.24 |
| 21,000+ | $0.24 | $0.24 |
| 30,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 15 V, while the collector-emitter voltage with external base-emitter short (VCES) is rated up to 20 V.
The device is supplied in a SOT223-4 surface mount package (TO-261AA / PG-SOT223-4).
The ambient operating temperature range is -65°C to 150°C, with a maximum junction temperature of 150°C.
Yes, it is RoHS3 compliant per the datasheet.
The maximum collector current (IC) is 210 mA, and base current (IB) is 21 mA.
The DC current gain is 70 minimum, 100 typical, and 140 maximum at IC = 70 mA and VCE = 8 V.
The transition frequency (fT) is 4 GHz minimum and 5.5 GHz typical at IC = 70 mA, VCE = 8 V.