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BF998RA-GS08 The Vishay Dale BF998RA-GS08 is an N-Channel Dual Gate MOS-Field-effect Tetrode, Depletion Mode RF MOSFET. It is designed for input and mixer stages in UHF tuners.
Mfr Part #:

BF998RA-GS08

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale BF998RA-GS08 is an N-Channel Dual Gate MOS-Field-effect Tetrode, Depletion Mode RF MOSFET. It is designed for input and mixer stages in UHF tuners.
✓ Total Stock: 200,000 pcs
$ Price Range: $0.99

BF998RA-GS08 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
200,000 pcs
On Request
200000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BF998RA-GS08 Specifications Quick View

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BF998RA-GS08 Description

Short technical summary and product information.

The Vishay Dale BF998RA-GS08 is an N-Channel Dual Gate MOS-Field-effect Tetrode, Depletion Mode RF MOSFET. This component is suitable for applications such as input and mixer stages in UHF tuners.

 

Key electrical characteristics include a Drain-Source Breakdown Voltage of 12V and a maximum Drain Current of 30mA. The Gate 1 and Gate 2 source breakdown voltages are rated at 7V. Leakage current for both gates is a maximum of 50nA.

 

This device comes in a SOT143R plastic case and is surface mountable. It operates within a channel temperature range of up to 150°C and has a total power dissipation of 200mW at or below 60°C ambient temperature. The component is lead (Pb)-free.

 

Features such as integrated gate protection diodes, low noise figure, low feedback capacitance, high cross-modulation performance, low input capacitance, high AGC-range, and high gain are characteristic of this MOSFET series.

BF998RA-GS08 Quick Information

Product Type: RF MOSFET
Canonical Name: BF998RA-GS08 N-Channel Dual Gate MOS-Field-effect Tetrode, Depletion Mode RF MOSFET
Subcategory: RF MOSFET

BF998RA-GS08 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free component

BF998RA-GS08 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BF998RA-GS08 Features

  • N-Channel Dual Gate Depletion Mode RF MOSFET.
  • Suitable for UHF tuner input and mixer stages.
  • 12V Drain-Source Breakdown Voltage.
  • 30mA maximum Drain Current.
  • SOT143R package for surface mounting.

BF998RA-GS08 Applications

  • Used in UHF tuner input stages.
  • Suitable for UHF tuner mixer stages.
  • RF signal processing applications.

BF998RA-GS08 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Breakdown Voltage for the BF998RA-GS08?

The Drain-Source Breakdown Voltage is 12V.

What is the maximum Drain Current for the BF998RA-GS08?

The maximum Drain Current is 30mA.

What package type is the BF998RA-GS08 supplied in?

The BF998RA-GS08 is supplied in a SOT143R plastic case.

What is the operating temperature range for the BF998RA-GS08?

The storage temperature range is -65 to 150 °C.

Is the BF998RA-GS08 a lead-free component?

Yes, the BF998RA-GS08 is a lead (Pb)-free component.

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