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BF996S,215 The BF996S,215 is an N-channel dual-gate MOS-FET from NXP Semiconductors. It features a maximum drain-source voltage of 20V and drain current of 30mA, with a total power dissipation of 200mW.
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BF996S,215

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Mfr Name: NXP Semiconductors
NXP Semiconductors
The BF996S,215 is an N-channel dual-gate MOS-FET from NXP Semiconductors. It features a maximum drain-source voltage of 20V and drain current of 30mA, with a total power dissipation of 200mW.
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BF996S,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Current Rating (Amps)
Frequency
Gain
Junction Temperature
Mounting Type
Noise Figure
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Voltage
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BF996S,215 Description

Short technical summary and product information.

The BF996S,215 is an N-channel dual-gate depletion type MOS-FET designed for RF applications. It is manufactured by NXP Semiconductors and comes in a surface mount SOT-143B package. Key electrical specifications include a maximum drain-source voltage of 20V, maximum drain current of 30mA, and total power dissipation of 200mW up to 60°C ambient temperature. The device offers a typical transfer admittance of 18mS, input capacitance of 2.3pF (max 2.6pF), and feedback capacitance of 25fF. Noise figure is typically 1dB at 200MHz, making it suitable for low-noise RF stages. The dual-gate configuration allows for automatic gain control (AGC) in applications such as UHF television tuners and professional communication equipment. The junction temperature is rated up to 150°C, and storage temperature range is -65°C to +150°C. Thermal resistance from junction to ambient is 460K/W when mounted on a ceramic substrate. The device is listed as RoHS3 Compliant, REACH Unaffected, and has an MSL of 1 Unlimited.

BF996S,215 Quick Information

Product Type: RF MOSFET
Canonical Name: NXP BF996S,215 N-Channel Dual-Gate MOSFET
Subcategory: N-Channel Dual Gate MOSFET

BF996S,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BF996S,215 Features

  • N-channel dual-gate depletion type MOSFET.
  • Maximum drain-source voltage of 20V.
  • Maximum drain current of 30mA.
  • Low noise figure of 1dB at 200MHz.
  • Surface mount SOT-143B package.

BF996S,215 Applications

  • Ideal for UHF television tuner circuits.
  • Suitable for professional communication equipment.
  • Used in RF amplifier and mixer stages.
  • AGC applications with dual-gate control.

BF996S,215 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BF996S,215?

20V.

What is the package type for the BF996S,215?

The device is available in a TO-253-4 / TO-253AA package with a SOT-143B supplier device package.

What is the operating temperature range?

The junction temperature is up to 150°C, and storage temperature range is -65°C to +150°C.

Is the BF996S,215 RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

What is the noise figure of the BF996S,215?

1 dB typical at 200MHz.

What is the typical gain of the BF996S,215?

25 dB typical.

What is the input capacitance?

2.3 pF typical, 2.6 pF maximum.

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